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Part no.
ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability
Summary
V(BR)DSS
RDS(on) ()
0.200 @ VGS= 4.5V
ID (A) 2.1 1.9 1.7
20
0.240 @ VGS= 2.5V 0.310 @ VGS= 1.8V
Description
This new generation dual n-channel trench MOSFET from Zetex features low on-resistance achievable with low gate drive.
Features
* * *
Low on-resistance Low gate drive capability SOT23-6 (dual) package
Applications
* * *
Power Management functions Disconnect switches Relay driving and load switching
Ordering information
Device Reel size (inches) Tape width (mm) Quantity per reel
G1 S2 G2
Pinout - top view
D1 S1 D2
ZXMN2088DE6TA
Device marking
2088
7
8
3,000
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ZXMN2088DE6
Absolute maximum ratings
Parameter
Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 4.5V; TA=25C @ VGS= 4.5V; TA=70C @ VGS= 4.5V; TA=25C Pulsed Drain current (c) Power dissipation at TA =25C (a) (d) Linear derating factor Power dissipation at TA =25C Linear derating factor Power dissipation at TA =25C Linear derating factor Operating and storage temperature range Tj, Tstg
(b) (d) (a) (e) (b) (d) (b) (d) (a) (d)
Symbol
VDSS VGS ID
Limit
20 8 2.1 1.7 1.7
Unit
V V A
IDM PD PD PD
8 0.9 7.2 1.1 8.8 1.3 10.4 -55 to +150
A W mW/C W mW/C W mW/C C
Thermal resistance Parameter
Junction to Ambient (a) (d) Junction to Ambient (a) (e) Junction to Ambient (b) (d)
Symbol
RJA RJA RJA
Value
139 113 96
Unit
C/W C/W C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us - pulse width limited by maximum junction temperature. (d) For device with one active die (e) For device with two active die running at equal power.
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ZXMN2088DE6
Thermal Characteristics
10
1.2
Max Power Dissipation (W)
RDS(on)
ID Drain Current (A)
Limited
1.0 0.8 0.6 0.4 0.2 0.0 0 20
2 Die Active (a)(e)
1
DC 1s 100ms Single Pulse T amb=25C 1 Die Active (a)(d) 10ms 1ms 100s
100m
1 Die Active (a)(d)
10m
VDS Drain-Source Voltage (V)
1
10
40
Temperature (C)
60
80
100 120 140 160
Safe Operating Area
Derating Curve
140
Thermal Resistance (C/W)
100 80 60 40 20 0 100 1m 10m 100m
D=0.2 D=0.1 D=0.05 Single Pulse D=0.5 1 Die Active (a)(d)
Maximum Power (W)
120
T amb=25C
100
Single Pulse T amb=25C 1 Die Active (a)(d)
10
1 100 1m 10m 100m 1 10 100 1k
Pulse Width (s)
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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ZXMN2088DE6
Electrical characteristics (at Tamb = 25C unless otherwise stated).
Parameter Static Drain-Source breakdown voltage Zero gate voltage drain current Zero gate voltage drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source on-state resistance (*) V(BR)DSS IDSS IDSS IGSS VGS(th) RDS(on) 0.4 112 137 165 Forward transconductance (*) () Dynamic
()
Symbol
Min.
Typ.
Max.
Unit
Conditions
20 100 1 100 1.0 0.200 0.240 0.310
V nA A nA V S
ID= 250A, VGS=0V VDS= 3V, VGS=0V VDS= 20V, VGS=0V VGS=8V, VDS=0V ID= 250A, VDS=VGS VGS= 4.5V, ID= 1.0A VGS= 2.5V, ID= 0.6A VGS= 1.8V, ID= 0.3A VDS= 10V, ID= 1.0A VDS= 10V, VGS=0V f=1MHz
gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr
4.6
Input capacitance Output capacitance Reverse transfer capacitance Switching
() ()
279 52 29
pF pF pF
Turn-on-delay time Rise time Turn-off delay time Fall time Gate Charge Total Gate charge Gate-Source charge Gate Drain charge Source-drain diode Diode forward voltage () Reverse recovery time Reverse recovery charge
2 3.2 12.7 6.2
ns ns ns ns
VDD= 10V,VGS=4.5V ID= 1A RG 6.0
3.8 0.41 0.56
nC nC nC
VDS= 10V, VGS= 4.5V ID= 2.4A
0.75 6.6 1.6
0.95
V ns nC
Tj=25C, IS= 1.0A, VGS=0V Tj = 25C, IF = 1.24A di/dt = 100A/s
NOTES: () * Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing.
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ZXMN2088DE6
Typical Characteristics
T = 25C
10V
4.5V 2V 1.5V
10
T = 150C
10V
4.5V
2.5V 2V 1.5V
ID Drain Current (A)
ID Drain Current (A)
10
2.5V
1
1V
1
1V
0.1
VGS 0.5V
VGS
0.1
0.1
VDS Drain-Source Voltage (V)
1
10
0.01
0.1
Output Characteristics
VDS Drain-Source Voltage (V)
1
10
Output Characteristics
VGS = 4.5V ID = 1A
1.6
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
VDS = 10V
1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 0
1
T = 150C
RDS(on)
0.1
0.01
T = 25C
VGS(th) VGS = VDS ID = 250uA
1E-3
VGS Gate-Source Voltage (V)
0.4
0.6
0.8
1.0
1.2
Tj Junction Temperature (C)
50
100
150
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance () 1
VGS T = 25C 2V
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
1V
10
T = 150C
1.5V
1
T = 25C
2.5V 3V 3.5V 4.5V 10V
0.1
VGS = -3V
0.1 0.1
ID Drain Current (A)
1
10
0.01
On-Resistance v Drain Current
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
0.2
0.4
0.6
0.8
1.0
1.2
1.4
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ZXMN2088DE6
VGS Gate-Source Voltage (V)
C Capacitance (pF)
400
CISS
VGS = 0V f = 1MHz
4 3 2 1 0
ID = 1A
200
COSS CRSS
VDS = 10V
VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
0 0.1
1
10
Q - Charge (nC) Gate-Source Voltage v Gate Charge
0
1
2
3
4
Test Circuits
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ZXMN2088DE6
Packaging details - SOT236
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ZXMN2088DE6
Definitions
Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com Diodes Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" "Active" "Last time buy (LTB)" "Not recommended for new designs" "Obsolete" Datasheet status key: "Draft version" "Provisional version" "Issue" Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Future device intended for production at some point. Samples may be available Product status recommended for new designs Device will be discontinued and last time buy period and delivery is in effect Device is still in production to support existing designs and production Production has been discontinued This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Diodes Zetex (Asia) Limited 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Diodes Incorporated 15660 N. Dallas Parkway Suite 850, Dallas TX 75248, USA
www.diodes.com
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